AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 2319 | en_US |
dc.citation.issueNumber | 6 | en_US |
dc.citation.spage | 2316 | en_US |
dc.citation.volumeNumber | 5 | en_US |
dc.contributor.author | Tut, Turgut | en_US |
dc.contributor.author | Gökkavas, Mutlu | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2016-02-08T11:35:35Z | |
dc.date.available | 2016-02-08T11:35:35Z | |
dc.date.issued | 2008 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description.abstract | We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:35:35Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2008 | en |
dc.identifier.doi | 10.1002/pssc.200778735 | en_US |
dc.identifier.issn | 1862-6351 | |
dc.identifier.uri | http://hdl.handle.net/11693/26778 | |
dc.language.iso | English | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1002/pssc.200778735 | en_US |
dc.source.title | Physica Status Solidi (C) Current Topics in Solid State Physics | en_US |
dc.subject | Avalanche gains | en_US |
dc.subject | Cut-off | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Responsivity | en_US |
dc.subject | Reverse bias | en_US |
dc.subject | Solar-blind photodetectors | en_US |
dc.subject | Ultraviolet illumination | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Optoelectronic devices | en_US |
dc.subject | Semiconductor diodes | en_US |
dc.subject | Photodetectors | en_US |
dc.title | AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain | en_US |
dc.type | Article | en_US |
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