Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage6384en_US
dc.citation.issueNumber16en_US
dc.citation.spage6381en_US
dc.citation.volumeNumber515en_US
dc.contributor.authorFoss, S.en_US
dc.contributor.authorFinstad, T. G.en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:14:00Z
dc.date.available2016-02-08T10:14:00Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractMultilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:14:00Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007en
dc.identifier.doi10.1016/j.tsf.2006.11.094en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/23443
dc.language.isoEnglishen_US
dc.publisherElsevier B.V.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.tsf.2006.11.094en_US
dc.source.titleThin Solid Filmsen_US
dc.subjectDiffusionen_US
dc.subjectGeen_US
dc.subjectInterfacesen_US
dc.subjectNanoparticleen_US
dc.subjectDiffusionen_US
dc.subjectGermaniumen_US
dc.subjectInterfaces (materials)en_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSilicaen_US
dc.subjectThin filmsen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectCrystalline diamondsen_US
dc.subjectGe concentrationen_US
dc.subjectMultilayer germanosilicateen_US
dc.subjectNanoparticlesen_US
dc.titleGrowth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin filmsen_US
dc.typeArticleen_US

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