Plasma-enhanced atomic layer deposition of III-nitride thin films
buir.contributor.author | Bıyıklı, Necmi | |
dc.citation.epage | 297 | en_US |
dc.citation.issueNumber | 10 | en_US |
dc.citation.spage | 289 | en_US |
dc.citation.volumeNumber | 58 | en_US |
dc.contributor.author | Ozgit-Akgun, Çağla | en_US |
dc.contributor.author | Dönmez İnci | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.date.accessioned | 2016-02-08T12:09:51Z | |
dc.date.available | 2016-02-08T12:09:51Z | |
dc.date.issued | 2013 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | AlN and GaN thin films were deposited by plasma-enhanced atomic layer deposition using trimethylmetal precursors. The films were found to have high oxygen incorporation, which was attributed to oxygen contamination related to the plasma system. The choice of nitrogen containing plasma gas (N2, N2/H2 or NH3) determined the severity of oxygen incorporation into deposited films. Lowest oxygen concentrations were attained for AlN and GaN thin films using NH3 and N2 plasma, respectively. Initial experiments have shown that GaN thin films with low impurity concentrations can be deposited when plasma-related oxygen contamination is avoided by the use of an alternative plasma source. © The Electrochemical Society. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:09:51Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1149/05810.0289ecst | en_US |
dc.identifier.issn | 1938-5862 | |
dc.identifier.uri | http://hdl.handle.net/11693/28056 | |
dc.language.iso | English | en_US |
dc.publisher | Electrochemical Society Inc. | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1149/05810.0289ecst | en_US |
dc.source.title | ECS Transactions | en_US |
dc.subject | Deposition | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Nitrogen | en_US |
dc.subject | Nitrogen plasma | en_US |
dc.subject | Oxygen | en_US |
dc.subject | Thin films | en_US |
dc.subject | Deposited films | en_US |
dc.subject | GaN thin films | en_US |
dc.subject | Low impurity concentrations | en_US |
dc.subject | Nitrogen-containing plasmas | en_US |
dc.subject | Oxygen concentrations | en_US |
dc.subject | Oxygen contamination | en_US |
dc.subject | Oxygen incorporation | en_US |
dc.subject | Plasma-enhanced atomic layer deposition | en_US |
dc.subject | Aluminum nitride | en_US |
dc.title | Plasma-enhanced atomic layer deposition of III-nitride thin films | en_US |
dc.type | Article | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Plasma-Enhanced_Atomic_Layer_Deposition_of_III-Nitride_Thin_Films.pdf
- Size:
- 173.56 KB
- Format:
- Adobe Portable Document Format
- Description: