Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

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dc.citation.epage066108-3en_US
dc.citation.issueNumber6en_US
dc.citation.spage066108-1en_US
dc.citation.volumeNumber99en_US
dc.contributor.authorMakino, T.en_US
dc.contributor.authorSaito, K.en_US
dc.contributor.authorOhtomo, A.en_US
dc.contributor.authorKawasaki, M.en_US
dc.contributor.authorSenger, R. T.en_US
dc.contributor.authorBajaj, K. K.en_US
dc.date.accessioned2016-02-08T10:19:40Z
dc.date.available2016-02-08T10:19:40Z
dc.date.issued2006en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractLocalization dynamics of excitons was studied for ZnOMgZnO and CdZnOMgZnO quantum wells (QWs). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum.en_US
dc.identifier.doi10.1063/1.2181431en_US
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/23815
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2181431en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectAbsorption spectrumen_US
dc.subjectExcitonic hoppingen_US
dc.subjectInhomogeneous broadeningen_US
dc.subjectLocalization dynamicsen_US
dc.subjectAbsorptionen_US
dc.subjectCadmium compoundsen_US
dc.subjectComputer simulationen_US
dc.subjectExcitonsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectZinc oxideen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleMonte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structuresen_US
dc.typeArticleen_US

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