Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

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Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures.pdf (242.95 KB)

Date

2006

Authors

Makino, T.
Saito, K.
Ohtomo, A.
Kawasaki, M.
Senger, R. T.
Bajaj, K. K.

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Source Title

Journal of Applied Physics

Print ISSN

0021-8979

Electronic ISSN

1089-7550

Publisher

American Institute of Physics

Volume

99

Issue

6

Pages

066108-1 - 066108-3

Language

English

Type

Article

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Abstract

Localization dynamics of excitons was studied for ZnOMgZnO and CdZnOMgZnO quantum wells (QWs). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum.

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Keywords

Absorption spectrum , Excitonic hopping , Inhomogeneous broadening , Localization dynamics , Absorption , Cadmium compounds , Computer simulation , Excitons , Photoluminescence , Zinc oxide , Semiconductor quantum wells

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Citation

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http://hdl.handle.net/11693/23815

Published Version (Please cite this version)

http://dx.doi.org/10.1063/1.2181431

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Scholarly Publications - Physics