Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures
Date
2006
Authors
Makino, T.
Saito, K.
Ohtomo, A.
Kawasaki, M.
Senger, R. T.
Bajaj, K. K.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Journal of Applied Physics
Print ISSN
0021-8979
Electronic ISSN
1089-7550
Publisher
American Institute of Physics
Volume
99
Issue
6
Pages
066108-1 - 066108-3
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Localization dynamics of excitons was studied for ZnOMgZnO and CdZnOMgZnO quantum wells (QWs). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum.