High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber2en_US
dc.citation.volumeNumber19en_US
dc.contributor.authorGorgulu, K.en_US
dc.contributor.authorGok, A.en_US
dc.contributor.authorYilmaz, M.en_US
dc.contributor.authorTopalli K.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2018-04-12T11:04:49Z
dc.date.available2018-04-12T11:04:49Z
dc.date.issued2017en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractPlasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light harvesting and emitting devices. Traditionally, metals are used to implement plasmonic structures. For sensing applications, it is desirable to integrate nanophotonic active surfaces with biasing and amplification circuitry to achieve monolithic low cost solutions. Commonly used plasmonic metals such as Au and Ag are not compatible with standard silicon complementary metal-oxide-semiconductor (CMOS) technology. Here we demonstrate plasmonic perfect absorbers based on high conductivity silicon. Standard optical lithography and reactive ion etching techniques were used for the patterning of the samples. We present computational and experimental results of surface plasmon resonances excited on a silicon surface at normal and oblique incidences. We experimentally demonstrate our absorbers as ultra-low cost, CMOS-compatible and efficient refractive index sensing surfaces. The experimental results reveal that the structure exhibits a sensitivity of around 11 000 nm/RIU and a figure of merit of up to 2.5. We also show that the sensing performance of the structure can be improved by increasing doping density.en_US
dc.identifier.doi10.1088/2040-8986/19/2/025002en_US
dc.identifier.issn2040-8978
dc.identifier.urihttp://hdl.handle.net/11693/37168
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/2040-8986/19/2/025002en_US
dc.source.titleJournal of Opticsen_US
dc.subjectAbsorberen_US
dc.subjectInfrareden_US
dc.subjectPlasmonicsen_US
dc.subjectRefractive index sensingen_US
dc.subjectSiliconen_US
dc.titleHigh-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared regionen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)