Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics

buir.contributor.authorArslan, Engin
buir.contributor.authorUlusoy Ghobadi, Turkan Gamze
buir.contributor.authorOzbay, Ekmel
buir.contributor.orcidUlusoy Ghobadi, Turkan Gamze|0000-0002-7669-1587
buir.contributor.orcidOzbay, Ekmell0000-0003-2953-1828
dc.citation.epage110976- 8en_US
dc.citation.spage110976- 1en_US
dc.citation.volumeNumber170en_US
dc.contributor.authorBadali, Y.
dc.contributor.authorArslan, Engin
dc.contributor.authorUlusoy Ghobadi, Turkan Gamze
dc.contributor.authorOzbay, Ekmel
dc.contributor.authorOzcelik, S.
dc.date.accessioned2023-02-14T11:04:16Z
dc.date.available2023-02-14T11:04:16Z
dc.date.issued2022-08-30
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractAmorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ∼9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV−1 cm−2 at the Ga2O3–p-Si interface.en_US
dc.embargo.release2024-08-30
dc.identifier.doi10.1016/j.jpcs.2022.110976en_US
dc.identifier.eissn1879-2553
dc.identifier.issn0022-3697
dc.identifier.urihttp://hdl.handle.net/11693/111253
dc.language.isoEnglishen_US
dc.publisherElsevier Ltden_US
dc.relation.isversionofhttps://doi.org/10.1016/j.jpcs.2022.110976en_US
dc.source.titleJournal of Physics and Chemistry of Solidsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectAmorphous Ga2O3en_US
dc.subjectDielectric propertiesen_US
dc.subjectInterface trapsen_US
dc.titlePlasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectricsen_US
dc.typeArticleen_US
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