Accurate and process-tolerant resistive load

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buir.contributor.authorSütbaş, Batuhan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorAtalar, Abdullah
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage2500en_US
dc.citation.issueNumber7en_US
dc.citation.spage2495en_US
dc.citation.volumeNumber68en_US
dc.contributor.authorSütbaş, Batuhan
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorAtalar, Abdullah
dc.date.accessioned2021-02-18T11:06:41Z
dc.date.available2021-02-18T11:06:41Z
dc.date.issued2020
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.departmentDepartment of Physics
dc.description.abstractResistive terminations cannot preserve high-quality matching at high frequencies due to the parasitic effects of the nonideal resistor. Moreover, resistance values of the termination resistors in integrated circuits are subject to process variations. Therefore, it is difficult to obtain accurate and process-tolerant terminations that are crucial for high performance in microwave circuits. We propose a new resistive network that compensates for the high-frequency parasitic effects of the resistors to improve the bandwidth of the termination. In addition to maintaining accuracy, the presented network provides tolerance to variation in the resistor values. The accuracy and tolerance of the proposed structure is analytically shown and experimentally verified by three test structures at the X-band fabricated on a GaN technology. The experimental results show that a small size and wideband 50-Ω load with a return loss better than 25 dB can be obtained, while the resistor value changes ±30%.en_US
dc.description.provenanceSubmitted by Onur Emek (onur.emek@bilkent.edu.tr) on 2021-02-18T11:06:41Z No. of bitstreams: 1 Accurate_and_Process-Tolerant_Resistive_Load.pdf: 2609328 bytes, checksum: d7dc02ac33123a7e9892c5a0a6341e98 (MD5)en
dc.description.provenanceMade available in DSpace on 2021-02-18T11:06:41Z (GMT). No. of bitstreams: 1 Accurate_and_Process-Tolerant_Resistive_Load.pdf: 2609328 bytes, checksum: d7dc02ac33123a7e9892c5a0a6341e98 (MD5) Previous issue date: 2020en
dc.identifier.doi10.1109/TMTT.2020.2986207en_US
dc.identifier.issn0018-9480
dc.identifier.urihttp://hdl.handle.net/11693/75449
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/TMTT.2020.2986207en_US
dc.source.titleIEEE Transactions on Microwave Theory and Techniquesen_US
dc.subjectAccurateen_US
dc.subjectIntegrated circuiten_US
dc.subjectParasitic effecten_US
dc.subjectProcess–temperature variationen_US
dc.subjectResistoren_US
dc.subjectSheet resistanceen_US
dc.subjectTerminationen_US
dc.subjectToleranceen_US
dc.subjectVia inductanceen_US
dc.subjectWidebanden_US
dc.titleAccurate and process-tolerant resistive loaden_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)