Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage6en_US
dc.citation.issueNumber27en_US
dc.citation.spage1en_US
dc.citation.volumeNumber49en_US
dc.contributor.authorKumar, M.en_US
dc.contributor.authorJeong, H.en_US
dc.contributor.authorPolat, K.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorLee, D.en_US
dc.date.accessioned2018-04-12T10:45:18Z
dc.date.available2018-04-12T10:45:18Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is formed between the AlGaN and the mechanically transferred graphene. The Schottky parameters are evaluated using an equivalent circuit with two diodes connected back-to-back in series. The PD shows a low dark current of 4.77 × 10-12 A at a bias voltage of -2.5 V. The room temperature current-voltage (I-V) measurements of the graphene/AlGaN/GaN Schottky PD exhibit a large photo-to-dark contrast ratio of more than four orders of magnitude. Furthermore, the device shows peak responsivity at a wavelength of 350 nm, corresponding to GaN band edge and a small hump at 300 nm associated to the AlGaN band edge. In addition, we examine the behaviour of Schottky PDs with responsivities of 0.56 and 0.079 A W-1 at 300 and 350 nm, respectively, at room temperature. © 2016 IOP Publishing Ltd.en_US
dc.identifier.doi10.1088/0022-3727/49/27/275105en_US
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/11693/36589
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0022-3727/49/27/275105en_US
dc.source.titleJournal of Physics D: Applied Physicsen_US
dc.subjectAlGaNen_US
dc.subjectGaNen_US
dc.subjectGraphemeen_US
dc.subjectPhotodetectoren_US
dc.subjectSchottky contacten_US
dc.titleFabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetectoren_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)