Nanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gap

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage76en_US
dc.citation.spage75en_US
dc.contributor.authorNizamoğlu, Sedaten_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorBaek J.-H.en_US
dc.contributor.authorLee I.-H.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialBelek-Antalya, Turkeyen_US
dc.date.accessioned2016-02-08T12:24:59Z
dc.date.available2016-02-08T12:24:59Z
dc.date.issued2009en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 4-8 Oct. 2009en_US
dc.description.abstractRecently the photometric conditions for ultra-efficient solid-state lighting have been discussed [1-2]. These studies show that a luminous efficacy of optical radiation at 408 lm/Wopt and a color rendering index (CRI) of 90 at a correlated color temperature (CCT) of 3000 K are achievable at the same time. For this purpose light emitting diodes (LEDs) emitting in blue, green, yellow, and red colors at 463, 530, 573, and 614 nm with relative optical power levels of 1/8, 2/8, 2/8, and 3/8, are required, respectively [1-2]. Although InxGa1-xN material system is capable to cover the whole visible by changing the In composition (x), it is technically extremely challenging to obtain efficient green/yellow light emitting diodes especially at those wavelengths (i.e., at 530 nm and 573 nm, respectively) due to reduced internal quantum efficiency [2-4]. Furthermore, by using the (Al xGa1-x)1-yInyP quaternary alloy it is also possible to cover from 650 nm to 580 nm. However, the efficiencies significantly decrease towards green. Therefore, there exists a significant gap in the green-yellow spectral regions (known as "the green gap") to make efficient light emitting diodes. To address this green gap problem, we propose and demonstrate proof-of-concept nanocrystal (NCs) hybridized green/yellow light emitting diodes that rely on both radiative energy transfer and nonradiative energy transfer (i.e., FRET-Förster resonance energy transfer) for color conversion on near-ultraviolet (near-UV) LEDs.en_US
dc.identifier.doi10.1109/LEOS.2009.5343463en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/28606
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.5343463en_US
dc.source.title2009 IEEE LEOS Annual Meeting Conference Proceedingsen_US
dc.subjectColor conversionsen_US
dc.subjectColor rendering indexen_US
dc.subjectCorrelated color temperatureen_US
dc.subjectGreen-yellow spectral regionen_US
dc.subjectInternal quantum efficiencyen_US
dc.subjectLuminous efficacyen_US
dc.subjectMaterial systemsen_US
dc.subjectNonradiative energy transferen_US
dc.subjectOptical poweren_US
dc.subjectOptical radiationsen_US
dc.subjectProof of concepten_US
dc.subjectQuaternary alloysen_US
dc.subjectRadiative energy transferen_US
dc.subjectResonance energy transferen_US
dc.subjectSolid state lightingen_US
dc.subjectColoren_US
dc.subjectDiodesen_US
dc.subjectEnergy transferen_US
dc.subjectGalliumen_US
dc.subjectLight emissionen_US
dc.subjectNanocrystalline alloysen_US
dc.subjectNanocrystalsen_US
dc.subjectQuenchingen_US
dc.subjectLight emitting diodesen_US
dc.titleNanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gapen_US
dc.typeConference Paperen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)