Networks of silicon nanowires: A large-sclae atomistic electronic structure analysis
dc.citation.epage | 203103-5 | en_US |
dc.citation.issueNumber | 20 | en_US |
dc.citation.spage | 203103-1 | en_US |
dc.citation.volumeNumber | 103 | en_US |
dc.contributor.author | Keleş, Ü. | en_US |
dc.contributor.author | Liedke, B. | en_US |
dc.contributor.author | Heinig, Karl-Heinz. | en_US |
dc.contributor.author | Bulutay, C. | en_US |
dc.date.accessioned | 2015-07-28T11:55:43Z | |
dc.date.available | 2015-07-28T11:55:43Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure. | en_US |
dc.description.provenance | Made available in DSpace on 2015-07-28T11:55:43Z (GMT). No. of bitstreams: 1 10.1063-1.4830039.pdf: 1963303 bytes, checksum: 6b38a165fbaf20c5fc0fdcaaf4a75479 (MD5) | en |
dc.identifier.doi | 10.1063/1.4830039 | en_US |
dc.identifier.eissn | 1520-8842 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/10766 | |
dc.language.iso | English | en_US |
dc.publisher | AIP Publishing LLC | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4830039 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.subject | Bottom up approach | en_US |
dc.subject | Branched nanostructures | en_US |
dc.subject | End-products | en_US |
dc.subject | Pseudopotentials | en_US |
dc.subject | Si nanowire | en_US |
dc.subject | Silicon nanowires | en_US |
dc.subject | Subsystem level | en_US |
dc.subject | Top-down designs | en_US |
dc.subject | Electronic properties | en_US |
dc.subject | Electronic structure | en_US |
dc.subject | Silicon | en_US |
dc.subject | Nanowires | en_US |
dc.title | Networks of silicon nanowires: A large-sclae atomistic electronic structure analysis | en_US |
dc.type | Article | en_US |
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