Networks of silicon nanowires: A large-sclae atomistic electronic structure analysis
Date
2013
Authors
Keleş, Ü.
Liedke, B.
Heinig, Karl-Heinz.
Bulutay, C.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1520-8842
Publisher
AIP Publishing LLC
Volume
103
Issue
20
Pages
203103-1 - 203103-5
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.