Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage160en_US
dc.citation.spage157en_US
dc.citation.volumeNumber740-742en_US
dc.contributor.authorUl Hassan J.en_US
dc.contributor.authorMeyer, A.en_US
dc.contributor.authorÇakmakyapan, Semihen_US
dc.contributor.authorKazar, Özgüren_US
dc.contributor.authorFlege J.I.en_US
dc.contributor.authorFalta J.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorJanzén, E.en_US
dc.date.accessioned2016-02-08T12:08:40Z
dc.date.available2016-02-08T12:08:40Z
dc.date.issued2013en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:08:40Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.4028/www.scientific.net/MSF.740-742.157en_US
dc.identifier.issn0255-5476
dc.identifier.urihttp://hdl.handle.net/11693/28021
dc.language.isoEnglishen_US
dc.publisherTrans Tech Publications, Switzerlanden_US
dc.relation.isversionofhttps://doi.org/10.4028/www.scientific.net/MSF.740-742.157en_US
dc.source.titleMaterials Science Forumen_US
dc.subjectAtomic force microscopyen_US
dc.subjectCarrier mobilityen_US
dc.subjectGrapheneen_US
dc.subjectHydrogen intercalationen_US
dc.subjectLow energy electron microscopyen_US
dc.subjectSurface morphologyen_US
dc.subjectGraphene growthen_US
dc.subjectGraphene layersen_US
dc.subjectGraphene propertiesen_US
dc.subjectHydrogen intercalationen_US
dc.subjectIn-situ etchingen_US
dc.subjectIn-vacuumen_US
dc.subjectLow energy electron microscopyen_US
dc.subjectSubstrate surfaceen_US
dc.subjectSubstrate surface preparationen_US
dc.subjectSurface evolutionen_US
dc.subjectSurface preparationen_US
dc.subjectEtched substratesen_US
dc.subjectGraphene propertiesen_US
dc.subjectHydrogen intercalationen_US
dc.subjectLow energy electron microscopyen_US
dc.subjectSubstrate surfaceen_US
dc.subjectSubstrate surface preparationen_US
dc.subjectSurface evolutionen_US
dc.subjectSurface preparationen_US
dc.subjectAtomic force microscopyen_US
dc.subjectCarrier mobilityen_US
dc.subjectElectron microscopyen_US
dc.subjectSilicon carbideen_US
dc.subjectSurface morphologyen_US
dc.subjectAtomic force microscopyen_US
dc.subjectCarrier mobilityen_US
dc.subjectElectronsen_US
dc.subjectSilicon carbideen_US
dc.subjectSubstratesen_US
dc.subjectSurface morphologyen_US
dc.subjectGrapheneen_US
dc.subjectGrapheneen_US
dc.titleSurface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene propertiesen_US
dc.typeArticleen_US

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