Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties
Date
2013
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Materials Science Forum
Print ISSN
0255-5476
Electronic ISSN
Publisher
Trans Tech Publications, Switzerland
Volume
740-742
Issue
Pages
157 - 160
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.
Course
Other identifiers
Book Title
Keywords
Atomic force microscopy , Carrier mobility , Graphene , Hydrogen intercalation , Low energy electron microscopy , Surface morphology , Graphene growth , Graphene layers , Graphene properties , Hydrogen intercalation , In-situ etching , In-vacuum , Low energy electron microscopy , Substrate surface , Substrate surface preparation , Surface evolution , Surface preparation , Etched substrates , Graphene properties , Hydrogen intercalation , Low energy electron microscopy , Substrate surface , Substrate surface preparation , Surface evolution , Surface preparation , Atomic force microscopy , Carrier mobility , Electron microscopy , Silicon carbide , Surface morphology , Atomic force microscopy , Carrier mobility , Electrons , Silicon carbide , Substrates , Surface morphology , Graphene , Graphene