Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties
Date
2013
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
1
views
views
10
downloads
downloads
Citation Stats
Series
Abstract
The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.
Source Title
Materials Science Forum
Publisher
Trans Tech Publications, Switzerland
Course
Other identifiers
Book Title
Keywords
Atomic force microscopy, Carrier mobility, Graphene, Hydrogen intercalation, Low energy electron microscopy, Surface morphology, Graphene growth, Graphene layers, Graphene properties, Hydrogen intercalation, In-situ etching, In-vacuum, Low energy electron microscopy, Substrate surface, Substrate surface preparation, Surface evolution, Surface preparation, Etched substrates, Graphene properties, Hydrogen intercalation, Low energy electron microscopy, Substrate surface, Substrate surface preparation, Surface evolution, Surface preparation, Atomic force microscopy, Carrier mobility, Electron microscopy, Silicon carbide, Surface morphology, Atomic force microscopy, Carrier mobility, Electrons, Silicon carbide, Substrates, Surface morphology, Graphene, Graphene
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Collections
Language
English