Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage650en_US
dc.citation.issueNumber9-10en_US
dc.citation.spage647en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorArdalı, S.en_US
dc.contributor.authorTiras, E.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T10:58:55Z
dc.date.available2018-04-12T10:58:55Z
dc.date.issued2016en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:58:55Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.eissn1563-5112
dc.identifier.issn0015-0193
dc.identifier.urihttp://hdl.handle.net/11693/36973
dc.language.isoEnglishen_US
dc.publisherTaylor & Francis Inc.en_US
dc.source.titleOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.subjectEffective massen_US
dc.subjectGaNen_US
dc.subjectQuantum hall effecten_US
dc.titleComplementary and alternative technique for the determination of electron effective mass: Quantum hall effecten_US
dc.typeArticleen_US

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