Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect

Date
2016
Advisor
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Source Title
Optoelectronics and Advanced Materials, Rapid Communications
Print ISSN
0015-0193
Electronic ISSN
1563-5112
Publisher
Taylor & Francis Inc.
Volume
10
Issue
9-10
Pages
647 - 650
Language
English
Type
Article
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Abstract

The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure.

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Keywords
Effective mass, GaN, Quantum hall effect
Citation
Published Version (Please cite this version)