Long-range ordered vertical III-nitride nano-cylinder arrays: Via plasma-assisted atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorYılmaz, Mehmet
dc.citation.epage6482en_US
dc.citation.issueNumber24en_US
dc.citation.spage6471en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorHaider A.en_US
dc.contributor.authorDeminskyi, P.en_US
dc.contributor.authorYılmaz, Mehmeten_US
dc.contributor.authorElmabruk, K.en_US
dc.contributor.authorYilmaz, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2019-02-21T16:02:54Zen_US
dc.date.available2019-02-21T16:02:54Zen_US
dc.date.issued2018en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated lowerature plasma-assisted atomic layer deposition (PA-ALD). III-Nitride HNCs have been characterized for their structural, chemical, surface, and optical properties. The material properties of nanostructured III-nitride materials have been compared with the thin-film counterparts which were also grown using PA-ALD. Our results revealed that long-range ordered arrays of III nitride HNCs were successfully integrated on Si substrates and possess hexagonal polycrystalline wurtzite crystalline structure. Such long-range ordered wafer-scale III-nitride nanostructures might be potentially used in piezotronic sensing, energy harvesting, resistive memory, flexible and wearable electronics, III-nitride photovoltaics, and (photo)catalysis.en_US
dc.identifier.doi10.1039/c8tc01165fen_US
dc.identifier.eissn2050-7534
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://hdl.handle.net/11693/50054en_US
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttps://doi.org/10.1039/c8tc01165fen_US
dc.source.titleJournal of Materials Chemistry Cen_US
dc.titleLong-range ordered vertical III-nitride nano-cylinder arrays: Via plasma-assisted atomic layer depositionen_US
dc.typeArticleen_US

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