Electrical conduction properties of Si δ-doped GaAs grown by MBE

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dc.citation.epage4206en_US
dc.citation.issueNumber21en_US
dc.citation.spage4202en_US
dc.citation.volumeNumber404en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorLisesivdin, S.B.en_US
dc.contributor.authorAltuntas H.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.date.accessioned2016-02-08T10:03:00Z
dc.date.available2016-02-08T10:03:00Z
dc.date.issued2009en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:03:00Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009en
dc.identifier.doi10.1016/j.physb.2009.07.190en_US
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/11693/22657
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.physb.2009.07.190en_US
dc.source.titlePhysica B: Condensed Matteren_US
dc.subject2D VRHen_US
dc.subjectImpurity band conductionen_US
dc.subjectSi δ-doped GaAsen_US
dc.subjectDislocation scatteringen_US
dc.subjectElectrical conductionen_US
dc.subjectGaAsen_US
dc.subjectHigh temperatureen_US
dc.subjectHopping conductionen_US
dc.subjectImpurity band conductionen_US
dc.subjectImpurity bandsen_US
dc.subjectLocalized stateen_US
dc.subjectLow temperaturesen_US
dc.subjectMott variable-range hoppingen_US
dc.subjectResistivity measurementen_US
dc.subjectTemperature dependenceen_US
dc.subjectTemperature dependenten_US
dc.subjectTemperature rangeen_US
dc.subjectCarrier concentrationen_US
dc.subjectConduction bandsen_US
dc.subjectElectric propertiesen_US
dc.subjectElectron mobilityen_US
dc.subjectGallium alloysen_US
dc.subjectHall effecten_US
dc.subjectMagnetic field effectsen_US
dc.subjectSemiconducting galliumen_US
dc.subjectSiliconen_US
dc.subjectTemperature distributionen_US
dc.subjectTransport propertiesen_US
dc.subjectThermal effectsen_US
dc.titleElectrical conduction properties of Si δ-doped GaAs grown by MBEen_US
dc.typeArticleen_US

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