Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage381en_US
dc.citation.issueNumber4en_US
dc.citation.spage377en_US
dc.citation.volumeNumber1en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang, X. L.en_US
dc.contributor.authorLu, S. P.en_US
dc.contributor.authorZhang, Y. P.en_US
dc.contributor.authorZhu B.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:12Z
dc.date.available2015-07-28T12:03:12Z
dc.date.issued2014-03-21en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractInGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm2. The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:12Z (GMT). No. of bitstreams: 1 HV3.pdf: 1389720 bytes, checksum: d7592076f6c5985cacb2e0f1e2e4fc57 (MD5)en
dc.identifier.doi10.1021/ph500001een_US
dc.identifier.issn2330-4022
dc.identifier.urihttp://hdl.handle.net/11693/12810
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ph500001een_US
dc.source.titleACS Photonicsen_US
dc.subjectGanen_US
dc.subjectLeden_US
dc.subjectQwen_US
dc.subjectEblen_US
dc.subjectMocvden_US
dc.titleAdvantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layeren_US
dc.typeArticleen_US

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