Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.issueNumber7en_US
dc.citation.volumeNumber24en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorAltındal, S.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:02:55Z
dc.date.available2016-02-08T10:02:55Z
dc.date.issued2009en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe forward current-voltage-temperature characteristics of (Ni/Au)-Al 0.83In0.17N/AlN/GaN heterostructures were studied in a temperature range of 80-375 K. The temperature dependences of the tunneling saturation current (It) and tunneling parameters (E0) were obtained. Weak temperature dependence of the saturation current and the absence of temperature dependence of the tunneling parameters were observed in this temperature range. The results indicate that in the temperature range of 80-375 K, the mechanism of charge transport in the (Ni/Au)-Al0.83In 0.17N/AlN/GaN heterostructure is performed by tunneling among dislocations intersecting the space-charge region. A model is used for nonuniform tunneling along these dislocations that intersect the space-charge region. The dislocation density that was calculated from the current-voltage characteristics, according to a model of tunneling along the dislocation line, gives the value 7.4 × 108 cm-2. This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements value of 5.9 × 108 cm-2. These data show that the current flows manifest a tunneling character, even at room temperature.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:02:55Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009en
dc.identifier.doi10.1088/0268-1242/24/7/075003en_US
dc.identifier.eissn1361-6641
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/22650
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttp://doi.org/10.1088/0268-1242/24/7/075003en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.titleTunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructuresen_US
dc.typeArticleen_US

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