Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers

buir.contributor.authorDurgun, Engin
buir.contributor.orcidDurgun, Engin|0000-0002-0639-5862
dc.citation.epage124002-6en_US
dc.citation.issueNumber124002en_US
dc.citation.spage124002-1en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorMogulkoc, Y.
dc.contributor.authorMogulkoc, A.
dc.contributor.authorGuler, H. E.
dc.contributor.authorDurgun, Engin
dc.date.accessioned2022-02-15T08:14:18Z
dc.date.available2022-02-15T08:14:18Z
dc.date.issued2021-12-13
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn alignment with the efforts on miniaturizing the components of electronic devices with enhanced performance, we investigate a dielectric nanocapacitor (DNC) based on metallic borophene electrodes separated with insulating hexagonal boron nitride (h-BN) monolayers (n=1–5). The capacitive performance of the proposed DNC as a function of applied electric field (→E) and thickness of the dielectric material is examined by using ab initio methods. The borophene plates and h-BN monolayers are commensurate and coupled only with van der Waals interaction, which constitutes an ideal configuration as a DNC. It is found that a single h-BN layer is not thick enough as a spacer to hinder quantum tunneling effects, and similar to the case with no insulating layer, borophene electrodes are shorted. Being effective from two h-BN layers, the charge separation on borophene plates is attained via →E in the vertical direction. The capacitance of the DNC rapidly saturates at →E≥0.1V/Å and reaches its maximum value of 0.77μF/cm2 for n=2. The capacitance decreases with an increasing number of insulating layers as the distance between electrodes enlarges and shows a similar trend that is expected from the classical Helmholtz model. Our results suggest metallic and lightweight borophene and insulating h-BN monolayers as ideal constituents for the DNC design.en_US
dc.description.provenanceSubmitted by Burcu Böke (tburcu@bilkent.edu.tr) on 2022-02-15T08:14:18Z No. of bitstreams: 1 Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers.pdf: 1910166 bytes, checksum: 4e6fd56364a72d2baf50d2fc41934a50 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-02-15T08:14:18Z (GMT). No. of bitstreams: 1 Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers.pdf: 1910166 bytes, checksum: 4e6fd56364a72d2baf50d2fc41934a50 (MD5) Previous issue date: 2021-12-13en
dc.identifier.doi10.1103/PhysRevMaterials.5.124002en_US
dc.identifier.eissn2475-9953
dc.identifier.issn2469-9950
dc.identifier.urihttp://hdl.handle.net/11693/77358
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttps://doi.org/10.1103/PhysRevMaterials.5.124002en_US
dc.source.titlePhysical Review Materialsen_US
dc.subjectCapacitanceen_US
dc.subjectElectronic structureen_US
dc.subject2-dimensional systemsen_US
dc.subjectDensity functional theoryen_US
dc.titleDesign of nanoscale capacitors based on metallic borophene and insulating boron nitride layersen_US
dc.typeArticleen_US

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