Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage102113-1en_US
dc.citation.issueNumber10en_US
dc.citation.spage102113-3en_US
dc.citation.volumeNumber91en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorAcar, S.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:06:12Z
dc.date.available2015-07-28T12:06:12Z
dc.date.issued2007-09-06en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractResistivity and Hall effect measurements in nominally undoped Al0.25Ga0.75N/GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of similar to 58 and similar to 218 meV contribute to the electron transport at high temperatures.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:06:12Z (GMT). No. of bitstreams: 1 10.1063-1.2778453.pdf: 370825 bytes, checksum: ecf4f6c552471696b752276eae7d3850 (MD5)en
dc.identifier.doi10.1063/1.2778453en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/13408
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2778453en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleElectronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysisen_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)