A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage10398en_US
dc.citation.issueNumber11en_US
dc.citation.spage10391en_US
dc.citation.volumeNumber30en_US
dc.contributor.authorBilgili, A. K.en_US
dc.contributor.authorAkpınar, Ö.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorSuludere, Z.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-03T08:19:11Z
dc.date.available2020-02-03T08:19:11Z
dc.date.issued2019
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology UNAM
dc.departmentNanotechnology Research Center NANOTAM
dc.departmentDepartment of Electrical and Electronics Engineering
dc.description.abstractIn this study optical properties of InGaN/GaN/Al2O3 multi-quantum well (MQW) structures are investigated in detail. Three samples containing InGaN/GaN/Al2O3 MQWs are grown by using metal organic chemical vapor deposition technique. Sapphire (6H–Al2O3) is used as the substrate. Forbidden energy band gaps (Eg) of these three samples are determined from photoluminescence and absorption spectra. Results gained from these two spectra are compared with each other. It is found that Eg values are between 2 and 3 eV. For determining refraction index, absorption coefficients, extinction coefficients and thickness of the films a rare method called Swanepoel envelope method is used. It is seen that results gained from this method are consistent with those in literature.en_US
dc.identifier.doi10.1007/s10854-019-01379-wen_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/52986
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttps://dx.doi.org/10.1007/s10854-019-01379-wen_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectQuantum wellsen_US
dc.subjectInGaN/GaN/Al2O3en_US
dc.subjectMetal organic chemical vapor deposition techniqueen_US
dc.subjectSapphire (6H–Al2O3)en_US
dc.subjectSwanepoel envelope methoden_US
dc.subjectMulti-quantum well (MQW)
dc.titleA detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wellsen_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)