Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.spage95008en_US
dc.citation.volumeNumber23en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorDemirezen, S.en_US
dc.contributor.authorCaliskan, M. D.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-06T09:32:53Z
dc.date.available2019-02-06T09:32:53Z
dc.date.issued2008-08-08en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHall effect measurements on unintentionally doped Al0.25Ga0.75N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Magnetic-field-dependent Hall data are analyzed using the quantitative mobility spectrum analysis (QMSA) technique. The QMSA technique successfully separated electrons in the 2D electron gas (2DEG) at the Al0.25Ga0.75N/GaN interface from other 2D and 3D conduction mechanisms of the samples. 2DEG mobilities, carrier densities and conductivities of the investigated samples are compared at room temperature and low temperature (20 K). For a detailed investigation of the 2DEG-related growth parameters, the scattering analyses of the extracted 2DEG were carried out for all of the samples. Using the results of the scattering analyses, the relation between the growth and scattering parameters was investigated. Increments in the interface roughness (IFR) are reported with the increased GaN buffer growth temperatures. In addition, a linear relation between the deformation potential and interface roughness (IFR) scattering is pointed out for the investigated samples, which may lead to a better understanding of the mechanism of IFR scattering.en_US
dc.description.provenanceSubmitted by Elsa Bitri (elsabitri@bilkent.edu.tr) on 2019-02-06T09:32:53Z No. of bitstreams: 1 Growth_parameter_investigation_ofAl025Ga075NGaNAlN_heterostructures_with_Hall_effect_measurements.pdf: 684986 bytes, checksum: bbb0de0749fcb49221623ef1879c818e (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-06T09:32:53Z (GMT). No. of bitstreams: 1 Growth_parameter_investigation_ofAl025Ga075NGaNAlN_heterostructures_with_Hall_effect_measurements.pdf: 684986 bytes, checksum: bbb0de0749fcb49221623ef1879c818e (MD5) Previous issue date: 2008-08-08en
dc.identifier.doi10.1088/0268-1242/23/9/095008en_US
dc.identifier.eissn1361-6641
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/48932
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1088/0268-1242/23/9/095008en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.titleGrowth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurementsen_US
dc.typeArticleen_US

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