Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage139en_US
dc.citation.issueNumber2en_US
dc.citation.spage133en_US
dc.citation.volumeNumber45en_US
dc.contributor.authorTasli, P.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÖzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:00:03Z
dc.date.available2016-02-08T10:00:03Z
dc.date.issued2009-12-01en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractResistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al0.88In 0.12N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al 0.88In0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al 0.88In0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSAen_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:00:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1002/crat.200900534en_US
dc.identifier.issn0232-1300
dc.identifier.urihttp://hdl.handle.net/11693/22435
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/crat.200900534en_US
dc.source.titleCrystal Research and Technologyen_US
dc.subject2DEGen_US
dc.subject2DHGen_US
dc.subjectAlInN/GaNen_US
dc.subjectQMSAen_US
dc.titleWell parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVDen_US
dc.typeArticleen_US

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