Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Date
2009-12-01
Advisor
Instructor
Source Title
Crystal Research and Technology
Print ISSN
0232-1300
Electronic ISSN
Publisher
Wiley
Volume
45
Issue
2
Pages
133 - 139
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al0.88In 0.12N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al 0.88In0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al 0.88In0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA

Course
Other identifiers
Book Title
Keywords
2DEG, 2DHG, AlInN/GaN, QMSA
Citation
Published Version (Please cite this version)