Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorAydınlı, Atilla
buir.contributor.authorBayındır, Mehmet
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage127en_US
dc.citation.issueNumber1en_US
dc.citation.spage125en_US
dc.citation.volumeNumber73en_US
dc.contributor.authorBayındır, Mehmeten_US
dc.contributor.authorTanriseven, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:35:06Z
dc.date.available2016-02-08T10:35:06Z
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:35:06Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2001en
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/24837
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.subjectAmorphous filmsen_US
dc.subjectBand structureen_US
dc.subjectCavity resonatorsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectRefractive indexen_US
dc.subjectSilicon nitrideen_US
dc.subjectMicrocavity structuresen_US
dc.subjectPhotonic crystal based coupled-microcavity structuresen_US
dc.subjectPhotonic crystalsen_US
dc.subjectSpontaneous emissionen_US
dc.titleStrong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structuresen_US
dc.typeArticleen_US

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