Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

Date
2001
Advisor
Instructor
Source Title
Applied Physics A: Materials Science and Processing
Print ISSN
0947-8396
Electronic ISSN
Publisher
Wiley
Volume
73
Issue
1
Pages
125 - 127
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

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Book Title
Keywords
Amorphous films, Band structure, Cavity resonators, Photoluminescence, Refractive index, Silicon nitride, Microcavity structures, Photonic crystal based coupled-microcavity structures, Photonic crystals, Spontaneous emission
Citation
Published Version (Please cite this version)