Experimental and computational analyses of electroabsorption in polar InGaN/GaN quantum zigzag heterostructures

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage436en_US
dc.citation.spage435en_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorÖzel, Tuncayen_US
dc.contributor.authorKoç, Aslıen_US
dc.contributor.authorJu, J.-W.en_US
dc.contributor.authorAhn, H.-K.en_US
dc.contributor.authorLee, I.-H.en_US
dc.contributor.authorBaek, J. H.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialAcapulco, Mexico
dc.date.accessioned2016-02-08T11:35:50Z
dc.date.available2016-02-08T11:35:50Z
dc.date.issued2008-11en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 9-13 Nov. 2008
dc.descriptionConference name: LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society
dc.description.abstractTraditional quantum confined Stark effect is well known to lead to strong electroabsorption in multiple quantum well (MQW) structures, yielding only red-shift of the absorption edge with the externally applied electric field, independent of the direction of the applied field. However, a little is known the electroabsorption behavior in III nitride quantum structures grown on c-plane of their wurtzite crystal structure, which is substantially different than the electroabsorption of conventional quantum structures. Such III-N heterostructures exhibit strong polarization fields and discontinuity of such polarization fields at their heterointerfaces causes stimulation of large electrostatic fields in alternating directions for their wells and barriers. Consequently, their energy band diagrams form a zigzag potential profile in conduction and valence bands, instead of those with square profiles. A natural and suitable approach for understanding these polarization fields and also developing insight to design related devices (e.g., electroabsorption modulators) is to study electroabsorption behavior as a function of the polarization field in such polar structures. To this end, we present a comparative, computational and experimental study of electroabsorption in our different designs of c-plane grown polar InGaN/GaN quantum structures with varying levels of polarization.en_US
dc.identifier.doi10.1109/LEOS.2008.4688677en_US
dc.identifier.urihttp://hdl.handle.net/11693/26787
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2008.4688677en_US
dc.source.titleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2008en_US
dc.subjectQuantum computing
dc.subjectGallium nitride
dc.subjectAbsorption
dc.subjectOptical polarization
dc.subjectElectrostatics
dc.subjectMaterials science and technology
dc.subjectQuantum well devices
dc.subjectNanotechnology
dc.subjectP-i-n diodes
dc.subjectStructural engineering
dc.titleExperimental and computational analyses of electroabsorption in polar InGaN/GaN quantum zigzag heterostructuresen_US
dc.typeConference Paperen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)