Determination of current transport and trap states density in AlInGaN/GaN heterostructures

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buir.contributor.authorArslan, Engin
buir.contributor.authorUral, Sertaç
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.spage113517en_US
dc.citation.volumeNumber103en_US
dc.contributor.authorArslan, Enginen_US
dc.contributor.authorUral, Sertaçen_US
dc.contributor.authorAltındal, Ş.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-05T11:10:28Z
dc.date.available2020-02-05T11:10:28Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe energy distribution and the relaxation time constant of the trap states with respect to conduction bands in the (Ni/Au) Schottky contact on AlInGaN/GaN heterostructures were investigated using the admittance technique. The potential dependent capacitance/conductance measurements were done in the frequency range of 5 kHz to 5 MHz at a temperature of 300 K. We found strong frequency dispersions at the accumulation regions and at the sharp transition regions (depletion region) in the capacitance curves. High frequency dispersion at the accumulation regions in C-V characteristics indicates that there is a high-density of surface traps between the metal–AlInGaN quaternary layer interfaces. Furthermore, the frequency dispersion at the sharp transition regions behavior can be attributed to the interface traps state between the AlInGaN quaternary layer and GaN layer. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located between the metal–AlInGaN interface (surface traps) and between AlInGaN/GaN interfaces (interface traps). The trap states density and time constants of the traps states were calculated as a function of energy separation from the conduction-band edge. The trap states' densities change between 1.3 × 1011 eV−1 cm−2 and 6.2 × 1011 eV−1 cm−2. Also, 4.8 to 5.3 μs time interval calculated for the relaxation times.en_US
dc.description.provenanceSubmitted by Onur Emek (onur.emek@bilkent.edu.tr) on 2020-02-05T11:10:28Z No. of bitstreams: 1 Bilkent-research-paper.pdf: 268963 bytes, checksum: ad2e3a30c8172b573b9662390ed2d3cf (MD5)en
dc.description.provenanceMade available in DSpace on 2020-02-05T11:10:28Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 268963 bytes, checksum: ad2e3a30c8172b573b9662390ed2d3cf (MD5) Previous issue date: 2019en
dc.embargo.release2021-12-01
dc.identifier.doi10.1016/j.microrel.2019.113517en_US
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/11693/53090
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://dx.doi.org/10.1016/j.microrel.2019.113517en_US
dc.source.titleMicroelectronics ReliabilityMicroelectronics Reliabilityen_US
dc.subjectCurrent-transporten_US
dc.subjectCapacitanceen_US
dc.subjectConductanceen_US
dc.subjectTrap statesen_US
dc.subjectAlInGaN alloyen_US
dc.subjectAdmittanceen_US
dc.titleDetermination of current transport and trap states density in AlInGaN/GaN heterostructuresen_US
dc.typeArticleen_US

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