Two-dimensional Janus GePAs monolayer: A direct-band-gap semiconductor with high and anisotropic mobility for efficient photocatalytic water splitting

buir.contributor.authorÖzbey, Doğukan Hazar
buir.contributor.authorDurgun, Engin
buir.contributor.orcidÖzbey, Doğukan Hazar|0000-0003-0560-5060
buir.contributor.orcidDurgun, Engin|0000-0002-0639-5862
dc.citation.epage034043-8en_US
dc.citation.issueNumber3en_US
dc.citation.spage034043-1en_US
dc.citation.volumeNumber17en_US
dc.contributor.authorÖzbey, Doğukan Hazar
dc.contributor.authorKılıç, M. E.
dc.contributor.authorDurgun, Engin
dc.date.accessioned2023-02-27T10:57:01Z
dc.date.available2023-02-27T10:57:01Z
dc.date.issued2022-03-15
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractTwo-dimensional (2D) materials with suitable electronic and optical properties offer various possibilities for photocatalytic applications. Although various 2D materials have hitherto been specified as adequate candidates, materials with high photocatalytic efficiency for water splitting are still minimal. In this study, we predict a 2D Janus GePAs monolayer and examine its capability for photocatalytic water splitting by performing first-principles calculations. The GePAs monolayer is shown to possess robust dynamic and thermal stability. The direct electronic band gap in the visible region and band-edge positions of the strain-free and strained monolayers are revealed to be convenient for redox reactions in wide pH ranges. The low recombination probability of charge carriers ensured by high and anisotropic carrier mobility enhances the material’s photocatalytic potential. Optical response calculations, including many-body interactions, indicate significant optical absorption capacity in the UV-visible range. Furthermore, low exciton binding energy facilitates dissociation into free electrons and holes, promoting photocatalytic reactions. Our study suggests that the GePAs monolayer is an ideal and remarkably promising material to be utilized in visible-light-driven photocatalytic applications.en_US
dc.description.provenanceSubmitted by Ayça Nur Sezen (ayca.sezen@bilkent.edu.tr) on 2023-02-27T10:57:01Z No. of bitstreams: 1 Two-dimensional_Janus_GePAs_monolayer_A_direct-band-gap_semiconductor_with_high_and_anisotropic_mobility_for_efficient_photocatalytic_water_splitting.pdf: 2140948 bytes, checksum: c0d79f7e9aa30b9e4fe799bb00912665 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-27T10:57:01Z (GMT). No. of bitstreams: 1 Two-dimensional_Janus_GePAs_monolayer_A_direct-band-gap_semiconductor_with_high_and_anisotropic_mobility_for_efficient_photocatalytic_water_splitting.pdf: 2140948 bytes, checksum: c0d79f7e9aa30b9e4fe799bb00912665 (MD5) Previous issue date: 2022-03-15en
dc.identifier.doi10.1103/PhysRevApplied.17.034043en_US
dc.identifier.eissn2331-7019
dc.identifier.urihttp://hdl.handle.net/11693/111816
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttps://doi.org/10.1103/PhysRevApplied.17.034043en_US
dc.source.titlePhysical Review Applieden_US
dc.titleTwo-dimensional Janus GePAs monolayer: A direct-band-gap semiconductor with high and anisotropic mobility for efficient photocatalytic water splittingen_US
dc.typeArticleen_US

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