Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage582en_US
dc.citation.issueNumber5en_US
dc.citation.spage578en_US
dc.citation.volumeNumber11en_US
dc.contributor.authorAtmaca, G.en_US
dc.contributor.authorElibol, K.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-01T11:46:48Z
dc.date.available2019-02-01T11:46:48Z
dc.date.issued2009-05en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron mobility transistors. Investigations were carried out by solving nonlinear Schrodinger-Poisson equations, self-consistently including polarization induced carriers that are important for GaN-based heterostructures and twodimensional electron gas (2DEG) formation. Strain relaxation limits were also calculated, in which optimized cases were found for the investigated Al-mole fraction and thickness values under pseudomorphic limits. The effect of the investigated thickness changes on electron probability densities show no important change in the overall simulations. In addition to a carrier increase in the selected optimum cases, reasonable mobility behavior is also expected.en_US
dc.identifier.eissn1841-7132
dc.identifier.issn1454-4164
dc.identifier.urihttp://hdl.handle.net/11693/48719
dc.language.isoEnglishen_US
dc.publisherInstitutul National de Cercetare-Dezvoltare pentru Optoelectronicaen_US
dc.source.titleJournal of Optoelectronics and Advanced Materialsen_US
dc.subjectAlGaNen_US
dc.subjectDCHEMTen_US
dc.subjectHEMTen_US
dc.subjectSchrödingeren_US
dc.subjectPoissonen_US
dc.subject2DEGen_US
dc.titleNumerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)en_US
dc.typeArticleen_US
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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