Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 582 | en_US |
dc.citation.issueNumber | 5 | en_US |
dc.citation.spage | 578 | en_US |
dc.citation.volumeNumber | 11 | en_US |
dc.contributor.author | Atmaca, G. | en_US |
dc.contributor.author | Elibol, K. | en_US |
dc.contributor.author | Lisesivdin, S. B. | en_US |
dc.contributor.author | Kasap, M. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2019-02-01T11:46:48Z | |
dc.date.available | 2019-02-01T11:46:48Z | |
dc.date.issued | 2009-05 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Department of Physics | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description.abstract | We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron mobility transistors. Investigations were carried out by solving nonlinear Schrodinger-Poisson equations, self-consistently including polarization induced carriers that are important for GaN-based heterostructures and twodimensional electron gas (2DEG) formation. Strain relaxation limits were also calculated, in which optimized cases were found for the investigated Al-mole fraction and thickness values under pseudomorphic limits. The effect of the investigated thickness changes on electron probability densities show no important change in the overall simulations. In addition to a carrier increase in the selected optimum cases, reasonable mobility behavior is also expected. | en_US |
dc.identifier.eissn | 1841-7132 | |
dc.identifier.issn | 1454-4164 | |
dc.identifier.uri | http://hdl.handle.net/11693/48719 | |
dc.language.iso | English | en_US |
dc.publisher | Institutul National de Cercetare-Dezvoltare pentru Optoelectronica | en_US |
dc.source.title | Journal of Optoelectronics and Advanced Materials | en_US |
dc.subject | AlGaN | en_US |
dc.subject | DCHEMT | en_US |
dc.subject | HEMT | en_US |
dc.subject | Schrödinger | en_US |
dc.subject | Poisson | en_US |
dc.subject | 2DEG | en_US |
dc.title | Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) | en_US |
dc.type | Article | en_US |
relation.isAuthorOfPublication | 8c1d6866-696d-46a3-a77d-5da690629296 |
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