High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage1163en_US
dc.citation.issueNumber11en_US
dc.citation.spage1161en_US
dc.citation.volumeNumber30en_US
dc.contributor.authorYu, H.-Y.en_US
dc.contributor.authorRen, S.en_US
dc.contributor.authorJung, W. S.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorMiller, D. A. B.en_US
dc.contributor.authorSaraswat, K. C.en_US
dc.date.accessioned2016-02-08T10:02:12Z
dc.date.available2016-02-08T10:02:12Z
dc.date.issued2009en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.en_US
dc.identifier.doi10.1109/LED.2009.2030905en_US
dc.identifier.eissn1558-0563
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/22596
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LED.2009.2030905en_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.subjectGermaniumen_US
dc.subjectPhotodiodeen_US
dc.subjectSelectiveen_US
dc.subjectStrainen_US
dc.subjectTensileen_US
dc.titleHigh-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integrationen_US
dc.typeArticleen_US

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