Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
buir.contributor.author | Akça, İmran B. | |
buir.contributor.author | Dâna, Aykutlu | |
buir.contributor.author | Aydınlı, Atilla | |
dc.citation.epage | 3 | en_US |
dc.citation.issueNumber | 5 | en_US |
dc.citation.spage | 1 | en_US |
dc.citation.volumeNumber | 92 | en_US |
dc.contributor.author | Akça, İmran B. | en_US |
dc.contributor.author | Dâna, Aykutlu | en_US |
dc.contributor.author | Aydınlı, Atilla | en_US |
dc.contributor.author | Turan, R. | en_US |
dc.date.accessioned | 2016-02-08T10:10:16Z | |
dc.date.available | 2016-02-08T10:10:16Z | |
dc.date.issued | 2008-02 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Advanced Research Laboratories (ARL) | |
dc.description.abstract | Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:10:16Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2008 | en |
dc.identifier.doi | 10.1063/1.2835455 | en_US |
dc.identifier.eissn | 1077-3118 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/23204 | |
dc.language.iso | English | en_US |
dc.publisher | AIP Publishing | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.2835455 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.subject | Annealing | en_US |
dc.subject | Electric discharges | en_US |
dc.subject | Electrons | en_US |
dc.subject | Germanium | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | Plasma enhanced chemical vapor deposition | en_US |
dc.subject | Annealing temperatures | en_US |
dc.subject | Discharge dynamics | en_US |
dc.subject | Germanium nanocrystal flash memories | en_US |
dc.subject | Flash memory | en_US |
dc.title | Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories | en_US |
dc.type | Article | en_US |
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