Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage27en_US
dc.citation.spage21en_US
dc.citation.volumeNumber416en_US
dc.contributor.authorHyung Nam J.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorNam, D.en_US
dc.contributor.authorAfshinmanesh F.en_US
dc.contributor.authorShim J.en_US
dc.contributor.authorPark, J.en_US
dc.contributor.authorBrongersma, M.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorKamins, T.I.en_US
dc.contributor.authorSaraswat, K.en_US
dc.date.accessioned2016-02-08T09:55:34Z
dc.date.available2016-02-08T09:55:34Z
dc.date.issued2015en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractA technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength. © 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2014.11.004en_US
dc.identifier.issn220248
dc.identifier.urihttp://hdl.handle.net/11693/22103
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jcrysgro.2014.11.004en_US
dc.source.titleJournal of Crystal Growthen_US
dc.subjectA1. Defectsen_US
dc.subjectA3. Chemical vapor deposition processen_US
dc.subjectB2. Semiconducting germaniumen_US
dc.subjectB3. Infrared devicesen_US
dc.subjectChemical mechanical polishingen_US
dc.subjectChemical polishingen_US
dc.subjectChemical vapor depositionen_US
dc.subjectCrystalline materialsen_US
dc.subjectElectromagnetic wave absorptionen_US
dc.subjectLight absorptionen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectSemiconducting germaniumen_US
dc.subjectSiliconen_US
dc.subjectSilicon oxidesen_US
dc.subjectSilicon wafersen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectChemical mechanical polishing(CMP)en_US
dc.subjectChemical vapor deposition processen_US
dc.subjectGermanium on insulatorsen_US
dc.subjectGermanium-on-insulatoren_US
dc.subjectMetal semiconductor metal photodetectoren_US
dc.subjectMonolithic integrationen_US
dc.subjectSingle-crystallineen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectGermaniumen_US
dc.titleLateral overgrowth of germanium for monolithic integration of germanium-on-insulator on siliconen_US
dc.typeArticleen_US

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