Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors

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dc.citation.epage1202en_US
dc.citation.issueNumber5en_US
dc.citation.spage1195en_US
dc.citation.volumeNumber7en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorPimparkar, N.en_US
dc.contributor.authorYesilyurt O.en_US
dc.contributor.authorKang, S.J.en_US
dc.contributor.authorAlam, M.A.en_US
dc.contributor.authorRogers J.A.en_US
dc.date.accessioned2016-02-08T10:14:22Z
dc.date.available2016-02-08T10:14:22Z
dc.date.issued2007en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractGate-modulated transport through partially aligned films of single-walled carbon nanotubes (SWNTs) in thin film type transistor structures are studied experimentally and theoretically. Measurements are reported on SWNTs grown by chemical vapor deposition with systematically varying degrees of alignment and coverage in transistors with a range of channel lengths and orientations perpendicular and parallel to the direction of alignment. A first principles stick-percolation-based transport model provides a simple, yet quantitative framework to interpret the sometimes counterintuitive transport parameters measured in these devices. The results highlight, for example, the dramatic influence of small degrees of SWNT misalignment on transistor performance and imply that coverage and alignment are correlated phenomena and therefore should be simultaneously optimized. The transport characteristics reflect heterogeneity in the underlying anisotropic metal-semiconductor stick-percolating network and cannot be reproduced by classical transport models. © 2007 American Chemical Society.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:14:22Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007en
dc.identifier.doi10.1021/nl062907men_US
dc.identifier.issn15306984
dc.identifier.urihttp://hdl.handle.net/11693/23468
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/nl062907men_US
dc.source.titleNano Lettersen_US
dc.subjectChannel lengthsen_US
dc.subjectPartially aligned arraysen_US
dc.subjectTransistor performanceen_US
dc.subjectTransport modelsen_US
dc.subjectAlignmenten_US
dc.subjectChemical vapor depositionen_US
dc.subjectFilm growthen_US
dc.subjectThin film transistorsen_US
dc.subjectSingle-walled carbon nanotubes (SWCN)en_US
dc.titleExperimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistorsen_US
dc.typeArticleen_US

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