Stable dispersion of iodide-capped PbSe quantum dots for high-performance low-temperature processed electronics and optoelectronics

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage4337en_US
dc.citation.issueNumber12en_US
dc.citation.spage4328en_US
dc.citation.volumeNumber27en_US
dc.contributor.authorSayevich, V.en_US
dc.contributor.authorGaponik N.en_US
dc.contributor.authorPlötner, M.en_US
dc.contributor.authorKruszynsk, M.en_US
dc.contributor.authorGemming, T.en_US
dc.contributor.authorDzhagan, V. M.en_US
dc.contributor.authorAkhavan S.en_US
dc.contributor.authorZahn, D. R. T.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorEychmüller, A.en_US
dc.date.accessioned2019-02-13T12:35:17Z
dc.date.available2019-02-13T12:35:17Z
dc.date.issued2015en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractHere, we present a ligand exchange of long insulating molecules with short, robust, and environmentally friendly iodide ions via a mild flocculation of PbSe nanocrystals (NCs). This ligand exchange leads to the formation of stable colloidal solutions in various polar solvents and in a broad concentration range via electrostatic repulsion. The iodide capping ligands preserve the electronic structure and maintain the optical properties of the PbSe NCs, both in solution and in the form of solid films. The spin-coated PbSe NC solids exhibit good transport characteristics with electron mobilities in the linear and saturation regimes reaching (2.1 ± 0.3) cm2 /(V•s) and (2.9 ± 0.4) cm2 /(V•s), respectively. This opens up opportunities for the low-cost and low-temperature fabrication of NC thin films being attractive for applications in the fields of electronics and optoelectronics.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2019-02-13T12:35:17Z No. of bitstreams: 1 Stable_dispersion_of_iodide_capped_PbSe_quantum_dots_for_high_performance_low_temperature_processed_electronics_and_optoelectronics.pdf: 416639 bytes, checksum: 26e95bfaef4b8f76cd7b2a1f8ab6b44c (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-13T12:35:17Z (GMT). No. of bitstreams: 1 Stable_dispersion_of_iodide_capped_PbSe_quantum_dots_for_high_performance_low_temperature_processed_electronics_and_optoelectronics.pdf: 416639 bytes, checksum: 26e95bfaef4b8f76cd7b2a1f8ab6b44c (MD5) Previous issue date: 2015en
dc.identifier.doi10.1021/acs.chemmater.5b00793en_US
dc.identifier.eissn1520-5002
dc.identifier.issn0897-4756
dc.identifier.urihttp://hdl.handle.net/11693/49443
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttps://pubs.acs.org/doi/10.1021/acs.chemmater.5b00793en_US
dc.source.titleChemistry of Materialsen_US
dc.titleStable dispersion of iodide-capped PbSe quantum dots for high-performance low-temperature processed electronics and optoelectronicsen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
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