Memristive behavior in a junctionless flash memory cell

dc.citation.epage233506-5en_US
dc.citation.issueNumber23en_US
dc.citation.spage233506en_US
dc.citation.volumeNumber106en_US
dc.contributor.authorOrak, I.en_US
dc.contributor.authorÜrel, M.en_US
dc.contributor.authorBakan, G.en_US
dc.contributor.authorDana, A.en_US
dc.date.accessioned2016-02-08T09:50:38Z
dc.date.available2016-02-08T09:50:38Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO2 as the tunnel dielectric, AI2O3 as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, R off/R on ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts Roff/Ron ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 106 s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.en_US
dc.identifier.doi10.1063/1.4922624en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/21747
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4922624en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAtomic layer depositionen_US
dc.subjectElectric groundingen_US
dc.subjectMemory architectureen_US
dc.subjectMemristorsen_US
dc.subjectMonolithic microwave integrated circuitsen_US
dc.subjectPassive filtersen_US
dc.subjectSemiconductor storageen_US
dc.subjectSilicon nitrideen_US
dc.subjectThreshold voltageen_US
dc.subjectControl dielectricsen_US
dc.subjectLow operating voltageen_US
dc.subjectMemristive behavioren_US
dc.subjectNeuromorphic computingen_US
dc.subjectProcessing applicationsen_US
dc.subjectResistive switchingen_US
dc.subjectTunnel dielectricsen_US
dc.subjectTwo-terminal devicesen_US
dc.subjectFlash memoryen_US
dc.titleMemristive behavior in a junctionless flash memory cellen_US
dc.typeArticleen_US
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