Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage32en_US
dc.citation.spage29en_US
dc.citation.volumeNumber98en_US
dc.contributor.authorZhu, B.en_US
dc.contributor.authorZhang, Z.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorLu, S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorKang, X.en_US
dc.contributor.authorWang, N.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2019-02-21T16:01:57Z
dc.date.available2019-02-21T16:01:57Z
dc.date.issued2018-04en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.description.abstractIn this work, we report how the Mg doping in the barriers affects the electrical performance of InGaN/GaN-based light-emitting diodes. When compared with the reference device that does not have Mg doped quantum barriers, the turn-on voltage for the proposed device is reduced and the electrical thermal stability is improved. The superior electrical performance is analyzed through the temperature dependent current-voltage and capacitance-voltage characteristics. Meanwhile a reduced depletion length and increased acceptor concentration are achieved in the control devices which is consistent with the simulated results.
dc.description.provenanceMade available in DSpace on 2019-02-21T16:01:57Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018en
dc.embargo.release2020-04-01en_US
dc.identifier.doi10.1016/j.physe.2017.12.025
dc.identifier.eissn1873-1759en_US
dc.identifier.issn1386-9477
dc.identifier.urihttp://hdl.handle.net/11693/49942
dc.language.isoEnglish
dc.publisherElsevier B. V.
dc.relation.isversionofhttps://doi.org/10.1016/j.physe.2017.12.025
dc.source.titlePhysica E: Low-Dimensional Systems and Nanostructuresen_US
dc.titleEffect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodesen_US
dc.typeArticleen_US

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