Soft x-ray photoemission studies of Hf oxidation

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buir.contributor.authorSüzer, Şefik
dc.citation.epage109en_US
dc.citation.issueNumber1en_US
dc.citation.spage106en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorSayan, S.en_US
dc.contributor.authorBanaszak Holl, M. M.en_US
dc.contributor.authorGarfunkel, E.en_US
dc.contributor.authorHussain, Z.en_US
dc.contributor.authorHamdan, N. M.en_US
dc.date.accessioned2016-02-08T10:31:00Z
dc.date.available2016-02-08T10:31:00Z
dc.date.issued2003en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractCharging of oxide films under x rays is an important issue that must be taken into consideration for determination of core-level binding energies as well as valence band offsets. Measurements are taken as a function of time, thickness, and annealing condition. Photoemission results show the presence of metallic Hf with the 4f7/2 binding energy of 18.16 eV, and at least one clear suboxide peak.en_US
dc.identifier.doi10.1116/1.1525816en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/24554
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.1525816en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectBinding energyen_US
dc.subjectFermi levelen_US
dc.subjectOxidationen_US
dc.subjectPhotoemissionen_US
dc.subjectPolycrystalline materialsen_US
dc.subjectSpectroscopyen_US
dc.subjectHafnium dioxideen_US
dc.subjectPolycrystalline hafnium foilen_US
dc.subjectSoft x ray photoemission spectroscopyen_US
dc.subjectValence band offseten_US
dc.subjectHafnium compoundsen_US
dc.titleSoft x-ray photoemission studies of Hf oxidationen_US
dc.typeArticleen_US

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