High-Speed InSb photodetectors on GaAs for mid-IR applications

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage770en_US
dc.citation.issueNumber4en_US
dc.citation.spage766en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloǧlu, T.en_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:26:27Z
dc.date.available2016-02-08T10:26:27Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Ω cm 2. At 77 K, spectral measurements yielded high responsivity between 3 and 5 μm with the cutoff wavelength of 5.33 μm. The maximum responsivity tor 80-μm diameter detectors was 1.00 × 10 5 V/W at 435 μm while the detectivity was 3.41×10 9 cm Hz 1/2/W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 μm with the pump at 780 mm. 30-μm diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:26:27Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1109/JSTQE.2004.833891en_US
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/11693/24257
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSTQE.2004.833891en_US
dc.source.titleIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.subjectHigh-speeden_US
dc.subjectInfrareden_US
dc.subjectPhotodetectoren_US
dc.subjectArsenicen_US
dc.subjectBandwidthen_US
dc.subjectChemical vapor depositionen_US
dc.subjectElectric resistanceen_US
dc.subjectEpitaxial growthen_US
dc.subjectFourier transformsen_US
dc.subjectInfrared radiationen_US
dc.subjectOptical propertiesen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectVoltage measurementen_US
dc.subjectHigh-speeden_US
dc.subjectMidinfrared (mid-IR)en_US
dc.subjectWavelengthen_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-Speed InSb photodetectors on GaAs for mid-IR applicationsen_US
dc.typeArticleen_US

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