Energy relaxation of electrons in InGaN quantum wells

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1569en_US
dc.citation.issueNumber4en_US
dc.citation.spage1565en_US
dc.citation.volumeNumber46en_US
dc.contributor.authorSarikavak-Lisesivdin, B.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorBalkan, N.en_US
dc.contributor.authorAtmaca, G.en_US
dc.contributor.authorNarin, P.en_US
dc.contributor.authorCakmak, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:24:46Z
dc.date.available2016-02-08T10:24:46Z
dc.date.issued2015-04en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:24:46Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015en
dc.identifier.doi10.1007/s11661-015-2762-2en_US
dc.identifier.issn1073-5623
dc.identifier.urihttp://hdl.handle.net/11693/24148
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s11661-015-2762-2en_US
dc.source.titleMetallurgical and Materials Transactions A - Physical Metallurgy and Materials Scienceen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectronsen_US
dc.subjectHigh electron mobility transistorsen_US
dc.subjectInelastic scatteringen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectElectron energiesen_US
dc.subjectEnergy relaxationen_US
dc.subjectInelastic scattering rateen_US
dc.subjectInGaN quantum wellsen_US
dc.subjectN-channelen_US
dc.subjectNon-equilibrium electronsen_US
dc.subjectPower-lossesen_US
dc.subjectTheoretical valuesen_US
dc.subjectElectron temperatureen_US
dc.titleEnergy relaxation of electrons in InGaN quantum wellsen_US
dc.typeArticleen_US

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