Energy relaxation of electrons in InGaN quantum wells
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 1569 | en_US |
dc.citation.issueNumber | 4 | en_US |
dc.citation.spage | 1565 | en_US |
dc.citation.volumeNumber | 46 | en_US |
dc.contributor.author | Sarikavak-Lisesivdin, B. | en_US |
dc.contributor.author | Lisesivdin, S. B. | en_US |
dc.contributor.author | Balkan, N. | en_US |
dc.contributor.author | Atmaca, G. | en_US |
dc.contributor.author | Narin, P. | en_US |
dc.contributor.author | Cakmak, H. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2016-02-08T10:24:46Z | |
dc.date.available | 2016-02-08T10:24:46Z | |
dc.date.issued | 2015-04 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description.abstract | In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:24:46Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en |
dc.identifier.doi | 10.1007/s11661-015-2762-2 | en_US |
dc.identifier.issn | 1073-5623 | |
dc.identifier.uri | http://hdl.handle.net/11693/24148 | |
dc.language.iso | English | en_US |
dc.publisher | Springer New York LLC | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1007/s11661-015-2762-2 | en_US |
dc.source.title | Metallurgical and Materials Transactions A - Physical Metallurgy and Materials Science | en_US |
dc.subject | Electron energy levels | en_US |
dc.subject | Electrons | en_US |
dc.subject | High electron mobility transistors | en_US |
dc.subject | Inelastic scattering | en_US |
dc.subject | Semiconducting indium compounds | en_US |
dc.subject | Semiconductor quantum wells | en_US |
dc.subject | Electron energies | en_US |
dc.subject | Energy relaxation | en_US |
dc.subject | Inelastic scattering rate | en_US |
dc.subject | InGaN quantum wells | en_US |
dc.subject | N-channel | en_US |
dc.subject | Non-equilibrium electrons | en_US |
dc.subject | Power-losses | en_US |
dc.subject | Theoretical values | en_US |
dc.subject | Electron temperature | en_US |
dc.title | Energy relaxation of electrons in InGaN quantum wells | en_US |
dc.type | Article | en_US |
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