Nanocrystal light-emitting diodes based on type II nanoplatelets

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage122en_US
dc.citation.spage115en_US
dc.citation.volumeNumber47en_US
dc.contributor.authorLiu, B.en_US
dc.contributor.authorDelikanli S.en_US
dc.contributor.authorGao, Y.en_US
dc.contributor.authorDede, D.en_US
dc.contributor.authorGungor K.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2019-02-21T16:01:51Z
dc.date.available2019-02-21T16:01:51Z
dc.date.issued2018en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractColloidal semiconductor nanoplatelets (NPLs) have recently emerged as a new family of semiconductor nanocrystals with distinctive structural and electronic properties originating from their atomically flat architecture. To date, type II NPLs have been demonstrated to possess great potential to optoelectronic applications, such as solar cells and lasers. Herein, nanocrystal light-emitting diodes (LEDs) based on type II NPLs have been developed. The photoluminescence quantum yield of these used type II NPL (CdSe/CdSe0.8Te0.2 core/crown) is close to 85%. By exploring an effective inverted structure with the dual hole transport layer, the NPL-LEDs exhibit i) a turn-on voltage of 1.9 V, ii) a maximum luminance of 34520 cd m−2, iii) an EQE of 3.57% and a PE of 9.44 lm W−1. Compared with previous NPL-based LEDs, the performance of our devices is remarkably enhanced. For example, the luminance is 350-fold higher than the best inverted NPL-based LED. The findings may not only represent a significant step for NPL-based LEDs, but also unlock a new opportunity that this class of type II NPLs materials are promising for developing high-performance LEDs.en_US
dc.description.provenanceMade available in DSpace on 2019-02-21T16:01:51Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018en
dc.description.sponsorshipThis research is supported by the National Research Foundation , Prime Minister's Office, Singapore under its Investigatorship program ( NRF-NRFI2016-08 ) and the Singapore Agency for Science, Technology and Research (A*STAR) SERC Pharos Program under Grant No. 152 73 00025 . HVD gratefully acknowledges TUBA-GEBIP. The electron microscopy imaging was performed at the Facility for Analysis, Characterization, Testing and Simulation (FACTS) at Nanyang Technological University, Singapore.en_US
dc.embargo.release2020-05-01en_US
dc.identifier.doi10.1016/j.nanoen.2018.02.004en_US
dc.identifier.eissn2211-3282en_US
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://hdl.handle.net/11693/49930
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.nanoen.2018.02.004en_US
dc.relation.projectPrime Minister's Office, Brunei Darussalam, Prime Minister's Office, Brunei Government - Agency for Science, Technology and Research, A*STAR - National Research Foundation, NRF - 152 73 00025 - NRF-NRFI2016-08 - Nanyang Technological University, NTUen_US
dc.source.titleNano Energyen_US
dc.subjectNanocrystalen_US
dc.subjectNanoplateleten_US
dc.subjectLight-emitting diodeen_US
dc.subjectType IIen_US
dc.subjectEfficiencyen_US
dc.titleNanocrystal light-emitting diodes based on type II nanoplateletsen_US
dc.typeArticleen_US

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