Model study of a surfactant on the GaAs(100) surface
buir.contributor.author | Çıracı, Salim | |
buir.contributor.orcid | Çıracı, Salim|0000-0001-8023-9860 | |
dc.citation.epage | 144 | en_US |
dc.citation.issueNumber | 2 | en_US |
dc.citation.spage | 141 | en_US |
dc.citation.volumeNumber | 96 | en_US |
dc.contributor.author | Consorte, C. D. | en_US |
dc.contributor.author | Fong, C. Y. | en_US |
dc.contributor.author | Watson, M. D. | en_US |
dc.contributor.author | Yang, L. H. | en_US |
dc.contributor.author | Çıracı, Salim | en_US |
dc.date.accessioned | 2015-07-28T11:57:05Z | |
dc.date.available | 2015-07-28T11:57:05Z | |
dc.date.issued | 2002-11-01 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Based on the facts that: (a) the transverse acoustic vibrational branch frequency is softened at the Brillouin zone boundaries of crystalline GaAs; (b) at the surface, the Ga-As bond is stronger than Ga-Te bond; and (c) the requirement that the final bond orientation of the Te surfactant should be rotated by 90degrees with respect to its initial orientation, we carried out a model study of an exchange process in epitaxial growth of GaAs (100). Even with very restrictive conditions imposed on the atomic movements, this study explains why Te is an effective surfactant for this type of growth. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
dc.description.provenance | Made available in DSpace on 2015-07-28T11:57:05Z (GMT). No. of bitstreams: 1 10.1016-S0921-5107(02)00305-7.pdf: 153533 bytes, checksum: a0a99d2eba98839fffe1edea8c860f11 (MD5) | en |
dc.identifier.doi | 10.1016/S0921-5107(02)00305-7 | en_US |
dc.identifier.issn | 0921-5107 | |
dc.identifier.uri | http://hdl.handle.net/11693/11204 | |
dc.language.iso | English | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1016/S0921-5107(02)00305-7 | en_US |
dc.source.title | Materials Science and Engineering B: Advanced Functional Solid-state Materials | en_US |
dc.subject | Gaas (100) surface | en_US |
dc.subject | Atoms | en_US |
dc.subject | Monolayers | en_US |
dc.subject | Surface active agents | en_US |
dc.subject | Surface phenomena | en_US |
dc.subject | Atomic movements | en_US |
dc.subject | Semiconducting gallium arsenide | en_US |
dc.subject | Epitaxial growth | en_US |
dc.subject | Lattice vibrations | en_US |
dc.title | Model study of a surfactant on the GaAs(100) surface | en_US |
dc.type | Article | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- 10.1016-S0921-5107(02)00305-7.pdf
- Size:
- 149.93 KB
- Format:
- Adobe Portable Document Format
- Description:
- Full printable version