Model study of a surfactant on the GaAs(100) surface

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buir.contributor.authorÇıracı, Salim
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.epage144en_US
dc.citation.issueNumber2en_US
dc.citation.spage141en_US
dc.citation.volumeNumber96en_US
dc.contributor.authorConsorte, C. D.en_US
dc.contributor.authorFong, C. Y.en_US
dc.contributor.authorWatson, M. D.en_US
dc.contributor.authorYang, L. H.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2015-07-28T11:57:05Z
dc.date.available2015-07-28T11:57:05Z
dc.date.issued2002-11-01en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractBased on the facts that: (a) the transverse acoustic vibrational branch frequency is softened at the Brillouin zone boundaries of crystalline GaAs; (b) at the surface, the Ga-As bond is stronger than Ga-Te bond; and (c) the requirement that the final bond orientation of the Te surfactant should be rotated by 90degrees with respect to its initial orientation, we carried out a model study of an exchange process in epitaxial growth of GaAs (100). Even with very restrictive conditions imposed on the atomic movements, this study explains why Te is an effective surfactant for this type of growth. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:57:05Z (GMT). No. of bitstreams: 1 10.1016-S0921-5107(02)00305-7.pdf: 153533 bytes, checksum: a0a99d2eba98839fffe1edea8c860f11 (MD5)en
dc.identifier.doi10.1016/S0921-5107(02)00305-7en_US
dc.identifier.issn0921-5107
dc.identifier.urihttp://hdl.handle.net/11693/11204
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0921-5107(02)00305-7en_US
dc.source.titleMaterials Science and Engineering B: Advanced Functional Solid-state Materialsen_US
dc.subjectGaas (100) surfaceen_US
dc.subjectAtomsen_US
dc.subjectMonolayersen_US
dc.subjectSurface active agentsen_US
dc.subjectSurface phenomenaen_US
dc.subjectAtomic movementsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectEpitaxial growthen_US
dc.subjectLattice vibrationsen_US
dc.titleModel study of a surfactant on the GaAs(100) surfaceen_US
dc.typeArticleen_US

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