Femtosecond laser written waveguides deep inside silicon

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dc.citation.epage3031en_US
dc.citation.issueNumber15en_US
dc.citation.spage3028en_US
dc.citation.volumeNumber42en_US
dc.contributor.authorPavlov, I.en_US
dc.contributor.authorTokel, O.en_US
dc.contributor.authorPavlova, S.en_US
dc.contributor.authorKadan, V.en_US
dc.contributor.authorMakey, G.en_US
dc.contributor.authorTurnalı, A.en_US
dc.contributor.authorYavuz, Ö.en_US
dc.contributor.authorIlday, F. Ö.en_US
dc.date.accessioned2018-04-12T11:00:30Z
dc.date.available2018-04-12T11:00:30Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractPhotonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6 × 10−4, and by direct light coupling and far-field imaging, yielding a value of 3.5 × 10−4. The formation mechanism of the modification is discussed.en_US
dc.identifier.doi10.1364/OL.42.003028en_US
dc.identifier.issn0146-9592
dc.identifier.urihttp://hdl.handle.net/11693/37024
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OL.42.003028en_US
dc.source.titleOptics Lettersen_US
dc.subjectContinuous wave lasersen_US
dc.subjectElectromagnetic pulseen_US
dc.subjectFiber lasersen_US
dc.subjectPhotonic devicesen_US
dc.subjectPulse repetition rateen_US
dc.subjectRefractive indexen_US
dc.subjectSiliconen_US
dc.subjectUltrafast lasersen_US
dc.subjectWaveguidesen_US
dc.subjectCentral wavelengthen_US
dc.subjectEr-doped fiber laseren_US
dc.subjectFar-field imagingen_US
dc.subjectFocal positionsen_US
dc.subjectFormation mechanismen_US
dc.subjectOptical shadowgraphyen_US
dc.subjectRefractive index changesen_US
dc.subjectRepetition rateen_US
dc.subjectUltrashort pulsesen_US
dc.titleFemtosecond laser written waveguides deep inside siliconen_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)