Multiexciton generation assisted highly photosensitive CdHgTe nanocrystal skins

Abstract

Multiexciton Generation (MEG) enabled by the photogeneration of more than one electron-hole pairs upon the absorption of a single photon observed in colloidal semiconductor nanocrystals (NCs) is an essential key to high efficiency when operating in large enough photon energy regimes. Here, we report a newly designed class of solution-processed highly sensitive MEG-assisted photosensors of CdHgTe NCs, in which the charge accumulation is dramatically enhanced for photon energies greater than two times the bandgap of the employed NCs. We fabricated and comparatively studied five types of devices based on different NC monolayers of selected quantum-confined bandgaps resulting in different levels of photovoltage buildup readouts. Among these photosensitive platforms, MEG is distinctly observed for CdHgTe NCs, as the number of electrons trapped inside these NCs and the number of holes accumulating into the interfacing metal electrode were increased beyond a single exciton per absorbed photon. Furthermore, we conducted time-resolved fluorescence measurements and confirmed the occurrence of MEG in the CdHgTe NC monolayer of the photosensor. These findings pave the way for engineering of multiexciton kinetics in high-efficiency NC-based photosensors and photovoltaics.