Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields

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buir.contributor.authorKorkut, Hilal
buir.contributor.authorSarpkaya, İbrahim
buir.contributor.orcidSarpkaya, İbrahim|0000-0002-1181-6174
dc.citation.epage015004-7en_US
dc.citation.issueNumber1
dc.citation.spage015004-1
dc.citation.volumeNumber10
dc.contributor.authorKorkut, Hilal
dc.contributor.authorSarpkaya, İbrahim
dc.date.accessioned2024-03-25T08:57:55Z
dc.date.available2024-03-25T08:57:55Z
dc.date.issued2022-10-28
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.description.abstractThe recent observation of room temperature spin-dependent photoluminescence (PL) emission from hexagonal boron nitride's (h-BN's) defect centers motivates for performing a complementary low-temperature photophysical study of quantum emitters under relatively high magnetic fields. Here, we investigate the PL emission dynamics of h-BN's visible single-photon emitters under an applied out-of-plane magnetic field at cryogenic temperatures. The PL intensity of the emitters in our work strikingly exhibits strong magnetic field dependence and decreases with the increased magnetic field. A substantial decrease in the integrated PL intensity of the emitters by up to one order of magnitude was observed when the applied field is increased from 0 T to 7 T. The observed reversible photodarkening of PL emission due to the applied magnetic field is in very well agreement with the predictions of a recent joint experimental and theoretical study and can happen only if the spin-selective, non-radiative, and asymmetric intersystem crossing transitions proceed from the triplet excited state to the lowest-lying spin-singlet metastable state and from the metastable state to the triplet ground state. Our results not only shed more light on the light emission paths of defect centers in h-BN but also show the use of the magnetic field as an efficient control knob in the development of magneto-optical devices.
dc.identifier.doi10.1088/2053-1583/ac9a59
dc.identifier.eissn2053-1583
dc.identifier.urihttps://hdl.handle.net/11693/115113
dc.language.isoEnglish
dc.publisherIOP Publishing
dc.relation.isversionofhttps://dx.doi.org/10.1088/2053-1583/ac9a59
dc.rightsCC BY 3.0 DEED (Attribution 3.0 Unported)
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.source.title2D Materials
dc.subjectHexagonal boron nitride
dc.subjectSingle-photon emitter
dc.subjectMagnetic field
dc.subjectDefect center
dc.subjectPhotoluminescence
dc.subject2D material
dc.titleControlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields
dc.typeArticle

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Institute of Materials Science and Nanotechnology (UNAM)