High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2729en_US
dc.citation.issueNumber21en_US
dc.citation.spage2727en_US
dc.citation.volumeNumber72en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorOnat, B. M.en_US
dc.contributor.authorAta, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorMirin, R. P.en_US
dc.contributor.authorKnopp, K. J.en_US
dc.contributor.authorBertness, K. A.en_US
dc.contributor.authorChristensen, D. H.en_US
dc.date.accessioned2016-02-08T10:43:33Z
dc.date.available2016-02-08T10:43:33Z
dc.date.issued1998-05-25en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractHigh-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:43:33Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998en
dc.identifier.doi10.1063/1.121073en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/25361
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.121073en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleHigh bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operationen_US
dc.typeArticleen_US

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