Low-temperature and high-quality growth of Bi2O2Se layered semiconductors via cracking metal–organic chemical vapor deposition

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buir.contributor.authorÇiçek, Mert Miraç
buir.contributor.authorDurgun, Engin
buir.contributor.orcidÇiçek, Mert Miraç|0000-0002-6775-2384
buir.contributor.orcidDurgun, Engin|0000-0002-0639-5862
dc.citation.epage8723en_US
dc.citation.issueNumber5en_US
dc.citation.spage8715en_US
dc.citation.volumeNumber15en_US
dc.contributor.authorKang, M.
dc.contributor.authorChai, H. J.
dc.contributor.authorJeong, H. B.
dc.contributor.authorPark, C.
dc.contributor.authorJung, In-Y.
dc.contributor.authorPark, E.
dc.contributor.authorÇiçek, Mert Miraç
dc.contributor.authorLee, I.
dc.contributor.authorBae, B. S.
dc.contributor.authorDurgun, Engin
dc.contributor.authorKwak, J. Y.
dc.contributor.authorSong, S.
dc.contributor.authorChoi, S. Y.
dc.contributor.authorJeong, Hu Y.
dc.contributor.authorKang, K.
dc.date.accessioned2022-01-28T13:05:56Z
dc.date.available2022-01-28T13:05:56Z
dc.date.issued2021-05-25
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractTernary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal–organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm2/(V·s) and photoresponsivity of 45134 A/W.en_US
dc.description.provenanceSubmitted by Mustafa Er (mer@bilkent.edu.tr) on 2022-01-28T13:05:56Z No. of bitstreams: 1 Low-temperature_and_high-quality_growth_of_Bi2O2Se_layered_semiconductors_via_cracking_metal–organic_chemical_vapor_deposition.pdf: 6294977 bytes, checksum: a9e30fe5f4a6922003402189bb9796a4 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-01-28T13:05:56Z (GMT). No. of bitstreams: 1 Low-temperature_and_high-quality_growth_of_Bi2O2Se_layered_semiconductors_via_cracking_metal–organic_chemical_vapor_deposition.pdf: 6294977 bytes, checksum: a9e30fe5f4a6922003402189bb9796a4 (MD5) Previous issue date: 2021-05-25en
dc.identifier.doi10.1021/acsnano.1c00811en_US
dc.identifier.eissn1936-086X
dc.identifier.issn1936-0851
dc.identifier.urihttp://hdl.handle.net/11693/76883
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttps://doi.org/10.1021/acsnano.1c00811en_US
dc.source.titleACS Nanoen_US
dc.subjectCracking metal−organic chemical vapor depositionen_US
dc.subjectBismuth-oxy-selenideen_US
dc.subjectLow-growth temperatureen_US
dc.subjectEpitaxial growthen_US
dc.subjectField-effect transistoren_US
dc.subjectPhotodetectoren_US
dc.titleLow-temperature and high-quality growth of Bi2O2Se layered semiconductors via cracking metal–organic chemical vapor depositionen_US
dc.typeArticleen_US

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