Atomic layer deposition of GaN at low temperatures
Date
Authors
Advisor
Instructor
Source Title
Print ISSN
Electronic ISSN
Publisher
Volume
Issue
Pages
Language
Type
Journal Title
Journal ISSN
Volume Title
Abstract
The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH 3) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 C for NH 3 doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to ∼385 C. Deposition rate, which is constant at ∼0.51 cycle within the temperature range of 250 - 350 C, increased slightly as the temperature decreased to 185 C. In the bulk film, concentrations of Ga, N, and O were constant at ∼36.6, ∼43.9, and ∼19.5 at. , respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix. © 2012 American Vacuum Society.